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Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers
In this study, we grew homoepitaxial layers on 3-inch on-axis carbon-face 4H-silicon carbide substrates and attempted to suppress the generation of 3C-inclusions. It was found that the 3C-inclusion density decreased with increasing time spent on reaching an objective flow rate for the precursors. It...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7663319/ https://www.ncbi.nlm.nih.gov/pubmed/33126653 http://dx.doi.org/10.3390/ma13214818 |