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Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition

The generic 1-bond → 2-mode “percolation-type” Raman signal inherent to the short bond of common A(1−x)B(x)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive “mesoscope” to explore how various ZnSe-based systems engage their pressure-induced structural trans...

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Autores principales: Shoker, M. B., Pagès, Olivier, Torres, V. J. B., Polian, A., Itié, J.-P., Pradhan, G. K., Narayana, C., Rao, M. N., Rao, R., Gardiennet, C., Kervern, G., Strzałkowski, K., Firszt, F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7666148/
https://www.ncbi.nlm.nih.gov/pubmed/33188245
http://dx.doi.org/10.1038/s41598-020-76509-0
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author Shoker, M. B.
Pagès, Olivier
Torres, V. J. B.
Polian, A.
Itié, J.-P.
Pradhan, G. K.
Narayana, C.
Rao, M. N.
Rao, R.
Gardiennet, C.
Kervern, G.
Strzałkowski, K.
Firszt, F.
author_facet Shoker, M. B.
Pagès, Olivier
Torres, V. J. B.
Polian, A.
Itié, J.-P.
Pradhan, G. K.
Narayana, C.
Rao, M. N.
Rao, R.
Gardiennet, C.
Kervern, G.
Strzałkowski, K.
Firszt, F.
author_sort Shoker, M. B.
collection PubMed
description The generic 1-bond → 2-mode “percolation-type” Raman signal inherent to the short bond of common A(1−x)B(x)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive “mesoscope” to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale—with a focus on Zn(1−x)Cd(x)Se. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (Zn(1−x)Be(x)Se, ZnSe(1−x)S(x)) or it opens (Zn(1−x)Cd(x)Se), depending on the hardening rates of the two environments under pressure. A partition of II–VI and III–V mixed crystals is accordingly outlined. Of special interest is the “closure” case, in which the system resonantly stabilizes ante transition at its “exceptional point” corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity as well as the thermalization rate of photo-generated electrons.
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spelling pubmed-76661482020-11-16 Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition Shoker, M. B. Pagès, Olivier Torres, V. J. B. Polian, A. Itié, J.-P. Pradhan, G. K. Narayana, C. Rao, M. N. Rao, R. Gardiennet, C. Kervern, G. Strzałkowski, K. Firszt, F. Sci Rep Article The generic 1-bond → 2-mode “percolation-type” Raman signal inherent to the short bond of common A(1−x)B(x)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive “mesoscope” to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale—with a focus on Zn(1−x)Cd(x)Se. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (Zn(1−x)Be(x)Se, ZnSe(1−x)S(x)) or it opens (Zn(1−x)Cd(x)Se), depending on the hardening rates of the two environments under pressure. A partition of II–VI and III–V mixed crystals is accordingly outlined. Of special interest is the “closure” case, in which the system resonantly stabilizes ante transition at its “exceptional point” corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity as well as the thermalization rate of photo-generated electrons. Nature Publishing Group UK 2020-11-13 /pmc/articles/PMC7666148/ /pubmed/33188245 http://dx.doi.org/10.1038/s41598-020-76509-0 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Shoker, M. B.
Pagès, Olivier
Torres, V. J. B.
Polian, A.
Itié, J.-P.
Pradhan, G. K.
Narayana, C.
Rao, M. N.
Rao, R.
Gardiennet, C.
Kervern, G.
Strzałkowski, K.
Firszt, F.
Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
title Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
title_full Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
title_fullStr Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
title_full_unstemmed Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
title_short Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
title_sort phonon-based partition of (znse-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7666148/
https://www.ncbi.nlm.nih.gov/pubmed/33188245
http://dx.doi.org/10.1038/s41598-020-76509-0
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