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High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots
High‐performance selector devices are essential for emerging nonvolatile memories to implement high‐density memory storage and large‐scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high‐unifor...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7675059/ https://www.ncbi.nlm.nih.gov/pubmed/33240773 http://dx.doi.org/10.1002/advs.202002251 |
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author | Li, Yujia Tang, Jianshi Gao, Bin Sun, Wen Hua, Qilin Zhang, Wenbin Li, Xinyi Zhang, Wanrong Qian, He Wu, Huaqiang |
author_facet | Li, Yujia Tang, Jianshi Gao, Bin Sun, Wen Hua, Qilin Zhang, Wenbin Li, Xinyi Zhang, Wanrong Qian, He Wu, Huaqiang |
author_sort | Li, Yujia |
collection | PubMed |
description | High‐performance selector devices are essential for emerging nonvolatile memories to implement high‐density memory storage and large‐scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high‐uniformity threshold switching HfO(2)‐based selectors are fabricated by using e‐beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross‐point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (<1 pA), high on/off ratio (>10(8)), high endurance (>10(8) cycles), and fast switching speed (≈75 ns). The patterned Ag NDs in the selector help control the number of Ag atoms diffusing into HfO(2) and confine the positions to form reproducible filaments. According to the statistical analysis, the Ag NDs selectors show much smaller cycle‐to‐cycle and device‐to‐device variations (C (V) < 10%) compared to control samples with nonpatterned Ag thin film. Furthermore, when integrating the Ag NDs selector with resistive switching memory in one‐selector‐one‐resistor (1S1R) structure, the reduced selector variation helps significantly reduce the bit error rate in 1S1R crossbar array. The high‐uniformity Ag NDs selectors offer great potential in the fabrication of large‐scale 1S1R crossbar arrays for future memory and neuromorphic computing applications. |
format | Online Article Text |
id | pubmed-7675059 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-76750592020-11-24 High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots Li, Yujia Tang, Jianshi Gao, Bin Sun, Wen Hua, Qilin Zhang, Wenbin Li, Xinyi Zhang, Wanrong Qian, He Wu, Huaqiang Adv Sci (Weinh) Full Papers High‐performance selector devices are essential for emerging nonvolatile memories to implement high‐density memory storage and large‐scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high‐uniformity threshold switching HfO(2)‐based selectors are fabricated by using e‐beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross‐point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (<1 pA), high on/off ratio (>10(8)), high endurance (>10(8) cycles), and fast switching speed (≈75 ns). The patterned Ag NDs in the selector help control the number of Ag atoms diffusing into HfO(2) and confine the positions to form reproducible filaments. According to the statistical analysis, the Ag NDs selectors show much smaller cycle‐to‐cycle and device‐to‐device variations (C (V) < 10%) compared to control samples with nonpatterned Ag thin film. Furthermore, when integrating the Ag NDs selector with resistive switching memory in one‐selector‐one‐resistor (1S1R) structure, the reduced selector variation helps significantly reduce the bit error rate in 1S1R crossbar array. The high‐uniformity Ag NDs selectors offer great potential in the fabrication of large‐scale 1S1R crossbar arrays for future memory and neuromorphic computing applications. John Wiley and Sons Inc. 2020-10-08 /pmc/articles/PMC7675059/ /pubmed/33240773 http://dx.doi.org/10.1002/advs.202002251 Text en © 2020 The Authors. Published by Wiley‐VCH GmbH This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Full Papers Li, Yujia Tang, Jianshi Gao, Bin Sun, Wen Hua, Qilin Zhang, Wenbin Li, Xinyi Zhang, Wanrong Qian, He Wu, Huaqiang High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots |
title | High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots |
title_full | High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots |
title_fullStr | High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots |
title_full_unstemmed | High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots |
title_short | High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots |
title_sort | high‐uniformity threshold switching hfo(2)‐based selectors with patterned ag nanodots |
topic | Full Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7675059/ https://www.ncbi.nlm.nih.gov/pubmed/33240773 http://dx.doi.org/10.1002/advs.202002251 |
work_keys_str_mv | AT liyujia highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT tangjianshi highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT gaobin highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT sunwen highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT huaqilin highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT zhangwenbin highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT lixinyi highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT zhangwanrong highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT qianhe highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots AT wuhuaqiang highuniformitythresholdswitchinghfo2basedselectorswithpatternedagnanodots |