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Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode
[Image: see text] Herein, single-domain κ-Ga(2)O(3) thin films were grown on FZ-grown ε-GaFeO(3) substrates via a step-flow growth mode. The ε-GaFeO(3) possessing the same crystal structure and similar lattice parameters as those of the orthorhombic κ-Ga(2)O(3) facilitated the growth of κ-Ga(2)O(3)...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7676342/ https://www.ncbi.nlm.nih.gov/pubmed/33225190 http://dx.doi.org/10.1021/acsomega.0c04634 |
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author | Nishinaka, Hiroyuki Ueda, Osamu Tahara, Daisuke Ito, Yusuke Ikenaga, Noriaki Hasuike, Noriyuki Yoshimoto, Masahiro |
author_facet | Nishinaka, Hiroyuki Ueda, Osamu Tahara, Daisuke Ito, Yusuke Ikenaga, Noriaki Hasuike, Noriyuki Yoshimoto, Masahiro |
author_sort | Nishinaka, Hiroyuki |
collection | PubMed |
description | [Image: see text] Herein, single-domain κ-Ga(2)O(3) thin films were grown on FZ-grown ε-GaFeO(3) substrates via a step-flow growth mode. The ε-GaFeO(3) possessing the same crystal structure and similar lattice parameters as those of the orthorhombic κ-Ga(2)O(3) facilitated the growth of κ-Ga(2)O(3) thin films, as observed by the X-ray diffraction (XRD) analysis. Furthermore, the surface morphologies of the κ-Ga(2)O(3) thin films exhibited a step–terrace and atomically flat structure. XRD φ-scan and transmission electron microscopy with selected area electron diffraction revealed that there is no occurrence of in-plane rotational domains in the κ-Ga(2)O(3) thin films on ε-GaFeO(3) substrates and that the κ-Ga(2)O(3) thin film comprised a single domain. TEM analysis revealed that there were no clear dislocations in the observation area. Moreover, high-resolution TEM observation showed that the atomic arrangements of the film and the substrate were continuous without the presence of an intermediate layer along the growth direction and were well-aligned in the in-plane direction. |
format | Online Article Text |
id | pubmed-7676342 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-76763422020-11-20 Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode Nishinaka, Hiroyuki Ueda, Osamu Tahara, Daisuke Ito, Yusuke Ikenaga, Noriaki Hasuike, Noriyuki Yoshimoto, Masahiro ACS Omega [Image: see text] Herein, single-domain κ-Ga(2)O(3) thin films were grown on FZ-grown ε-GaFeO(3) substrates via a step-flow growth mode. The ε-GaFeO(3) possessing the same crystal structure and similar lattice parameters as those of the orthorhombic κ-Ga(2)O(3) facilitated the growth of κ-Ga(2)O(3) thin films, as observed by the X-ray diffraction (XRD) analysis. Furthermore, the surface morphologies of the κ-Ga(2)O(3) thin films exhibited a step–terrace and atomically flat structure. XRD φ-scan and transmission electron microscopy with selected area electron diffraction revealed that there is no occurrence of in-plane rotational domains in the κ-Ga(2)O(3) thin films on ε-GaFeO(3) substrates and that the κ-Ga(2)O(3) thin film comprised a single domain. TEM analysis revealed that there were no clear dislocations in the observation area. Moreover, high-resolution TEM observation showed that the atomic arrangements of the film and the substrate were continuous without the presence of an intermediate layer along the growth direction and were well-aligned in the in-plane direction. American Chemical Society 2020-11-04 /pmc/articles/PMC7676342/ /pubmed/33225190 http://dx.doi.org/10.1021/acsomega.0c04634 Text en © 2020 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Nishinaka, Hiroyuki Ueda, Osamu Tahara, Daisuke Ito, Yusuke Ikenaga, Noriaki Hasuike, Noriyuki Yoshimoto, Masahiro Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode |
title | Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode |
title_full | Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode |
title_fullStr | Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode |
title_full_unstemmed | Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode |
title_short | Single-Domain and Atomically Flat Surface of κ-Ga(2)O(3) Thin Films on FZ-Grown ε-GaFeO(3) Substrates via Step-Flow Growth Mode |
title_sort | single-domain and atomically flat surface of κ-ga(2)o(3) thin films on fz-grown ε-gafeo(3) substrates via step-flow growth mode |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7676342/ https://www.ncbi.nlm.nih.gov/pubmed/33225190 http://dx.doi.org/10.1021/acsomega.0c04634 |
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