Absorption and photoconductivity spectra of amorphous multilayer structures

The experimental results regarding optical absorption and steady-state photoconductivity of amorphous single-layer structures (Al–As(0.40)S(0.30)Se(0.30)–Al, Al–Ge(0.09)As(0.09)Se(0.82)–Al, and Al–Ge(0.30)As(0.04)S(0.66)–Al) and of an amorphous heterostructure (Al–As(0.40)S(0.30)Se(0.30)/Ge(0.09)As(0.09)Se(0.82)/Ge(0.30)As(0.04)S(0.66)–Al) at different values of the voltage, with positive or negative polarity, applied to the illuminated top Al electrode are presented and discussed. The complex structure of the photocurrent spectra is attributed to the different values of the optical bandgap of the involved amorphous layers (E(g) ≈ 2.0 eV for As(0.40)S(0.30)Se(0.30) and Ge(0.09)As(0.09)Se(0.82) and E(g) ≈ 3.0 eV for Ge(0.30)As(0.04)S(0.66)). The obtained experimental results are discussed taking into account the light absorption depending on the nature and the thickness of each amorphous layer, on the wavelength, and on contact phenomena at the interfaces between different layers and between the amorphous layers and the metal electrodes with different work functions.