InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unip...

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Autores principales: Ting, David Z., Rafol, Sir B., Khoshakhlagh, Arezou, Soibel, Alexander, Keo, Sam A., Fisher, Anita M., Pepper, Brian J., Hill, Cory J., Gunapala, Sarath D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7692601/
https://www.ncbi.nlm.nih.gov/pubmed/33114617
http://dx.doi.org/10.3390/mi11110958
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author Ting, David Z.
Rafol, Sir B.
Khoshakhlagh, Arezou
Soibel, Alexander
Keo, Sam A.
Fisher, Anita M.
Pepper, Brian J.
Hill, Cory J.
Gunapala, Sarath D.
author_facet Ting, David Z.
Rafol, Sir B.
Khoshakhlagh, Arezou
Soibel, Alexander
Keo, Sam A.
Fisher, Anita M.
Pepper, Brian J.
Hill, Cory J.
Gunapala, Sarath D.
author_sort Ting, David Z.
collection PubMed
description The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.
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spelling pubmed-76926012020-11-28 InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors Ting, David Z. Rafol, Sir B. Khoshakhlagh, Arezou Soibel, Alexander Keo, Sam A. Fisher, Anita M. Pepper, Brian J. Hill, Cory J. Gunapala, Sarath D. Micromachines (Basel) Review The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development. MDPI 2020-10-26 /pmc/articles/PMC7692601/ /pubmed/33114617 http://dx.doi.org/10.3390/mi11110958 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Ting, David Z.
Rafol, Sir B.
Khoshakhlagh, Arezou
Soibel, Alexander
Keo, Sam A.
Fisher, Anita M.
Pepper, Brian J.
Hill, Cory J.
Gunapala, Sarath D.
InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
title InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
title_full InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
title_fullStr InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
title_full_unstemmed InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
title_short InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
title_sort inas/inassb type-ii strained-layer superlattice infrared photodetectors
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7692601/
https://www.ncbi.nlm.nih.gov/pubmed/33114617
http://dx.doi.org/10.3390/mi11110958
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