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High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO(2) TFTs, with a high field-effect mobility (μ(FE)) of 136 cm(2)/V...

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Detalles Bibliográficos
Autores principales:	Yen, Te Jui, Chin, Albert, Gritsenko, Vladimir
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7694091/ https://www.ncbi.nlm.nih.gov/pubmed/33126463 http://dx.doi.org/10.3390/nano10112145

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