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Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been dev...

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Detalles Bibliográficos
Autor principal: Piprek, Joachim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697387/
https://www.ncbi.nlm.nih.gov/pubmed/33212781
http://dx.doi.org/10.3390/ma13225174
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author Piprek, Joachim
author_facet Piprek, Joachim
author_sort Piprek, Joachim
collection PubMed
description Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.
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spelling pubmed-76973872020-11-29 Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges Piprek, Joachim Materials (Basel) Review Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements. MDPI 2020-11-17 /pmc/articles/PMC7697387/ /pubmed/33212781 http://dx.doi.org/10.3390/ma13225174 Text en © 2020 by the author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Piprek, Joachim
Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
title Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
title_full Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
title_fullStr Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
title_full_unstemmed Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
title_short Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
title_sort efficiency models for gan-based light-emitting diodes: status and challenges
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697387/
https://www.ncbi.nlm.nih.gov/pubmed/33212781
http://dx.doi.org/10.3390/ma13225174
work_keys_str_mv AT piprekjoachim efficiencymodelsforganbasedlightemittingdiodesstatusandchallenges