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Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been dev...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697387/ https://www.ncbi.nlm.nih.gov/pubmed/33212781 http://dx.doi.org/10.3390/ma13225174 |
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author | Piprek, Joachim |
author_facet | Piprek, Joachim |
author_sort | Piprek, Joachim |
collection | PubMed |
description | Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements. |
format | Online Article Text |
id | pubmed-7697387 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-76973872020-11-29 Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges Piprek, Joachim Materials (Basel) Review Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements. MDPI 2020-11-17 /pmc/articles/PMC7697387/ /pubmed/33212781 http://dx.doi.org/10.3390/ma13225174 Text en © 2020 by the author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Piprek, Joachim Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
title | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
title_full | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
title_fullStr | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
title_full_unstemmed | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
title_short | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
title_sort | efficiency models for gan-based light-emitting diodes: status and challenges |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697387/ https://www.ncbi.nlm.nih.gov/pubmed/33212781 http://dx.doi.org/10.3390/ma13225174 |
work_keys_str_mv | AT piprekjoachim efficiencymodelsforganbasedlightemittingdiodesstatusandchallenges |