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Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor
As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697452/ https://www.ncbi.nlm.nih.gov/pubmed/33182438 http://dx.doi.org/10.3390/nano10112226 |