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Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control
We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al(2)O(3) and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to tw...
Autores principales: | Guo, Chuchu, Cheng, Laifei, Ye, Fang, Zhang, Qing |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697484/ https://www.ncbi.nlm.nih.gov/pubmed/33212809 http://dx.doi.org/10.3390/ma13225179 |
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