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Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al(2)O(3) and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to tw...

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Detalles Bibliográficos
Autores principales: Guo, Chuchu, Cheng, Laifei, Ye, Fang, Zhang, Qing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697484/
https://www.ncbi.nlm.nih.gov/pubmed/33212809
http://dx.doi.org/10.3390/ma13225179

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