Cargando…
Low-Power pH Sensor Based on Narrow Channel Open-Gated Al(0.25)Ga(0.75)N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels
pH sensors with low-power and strong anti-interference are extremely important for industrial online real-time detection. Herein, a narrow channel pH sensor based on Al(0.25)Ga(0.75)N/GaN high electron mobility transistor (HEMT) with package integrated Polydimethylsiloxane (PDMS) microchannels is pr...
Autores principales: | Yang, Xianghong, Ao, Jiapei, Wu, Sichen, Ma, Shenhui, Li, Xin, Hu, Long, Liu, Weihua, Han, Chuanyu |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7700280/ https://www.ncbi.nlm.nih.gov/pubmed/33266399 http://dx.doi.org/10.3390/ma13225282 |
Ejemplares similares
-
A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors
por: Amir, Walid, et al.
Publicado: (2021) -
Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al(0.25)Ga(0.75)N/GaN Quantum Point Contacts
por: Lu, Fangchao, et al.
Publicado: (2017) -
A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology
por: Kim, Jeong-Geun, et al.
Publicado: (2023) -
Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors
por: Amir, Walid, et al.
Publicado: (2021) -
Low Al-composition p-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
por: Zhang, Kexiong, et al.
Publicado: (2014)