Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both “front end of line” (FEOL) (doped semiconducting layers) and “back end of line” (BEOL) layers (metallization, trench dielectric, and isolation) of highly integrated microel...

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Detalles Bibliográficos
Autores principales: Coq Germanicus, Rosine, De Wolf, Peter, Lallemand, Florent, Bunel, Catherine, Bardy, Serge, Murray, Hugues, Lüders, Ulrike
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2020
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7705862/
https://www.ncbi.nlm.nih.gov/pubmed/33299736
http://dx.doi.org/10.3762/bjnano.11.159

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7705862/
https://www.ncbi.nlm.nih.gov/pubmed/33299736
http://dx.doi.org/10.3762/bjnano.11.159

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