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Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic...

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Autores principales: Fidyk, Julia, Waliszewski, Witold, Sleczkowski, Piotr, Kiersnowski, Adam, Pisula, Wojciech, Marszalek, Tomasz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7709025/
https://www.ncbi.nlm.nih.gov/pubmed/33187323
http://dx.doi.org/10.3390/polym12112662
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author Fidyk, Julia
Waliszewski, Witold
Sleczkowski, Piotr
Kiersnowski, Adam
Pisula, Wojciech
Marszalek, Tomasz
author_facet Fidyk, Julia
Waliszewski, Witold
Sleczkowski, Piotr
Kiersnowski, Adam
Pisula, Wojciech
Marszalek, Tomasz
author_sort Fidyk, Julia
collection PubMed
description Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN(2)) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C(14)) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN(2) crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.
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spelling pubmed-77090252020-12-03 Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors Fidyk, Julia Waliszewski, Witold Sleczkowski, Piotr Kiersnowski, Adam Pisula, Wojciech Marszalek, Tomasz Polymers (Basel) Article Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN(2)) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C(14)) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN(2) crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors. MDPI 2020-11-11 /pmc/articles/PMC7709025/ /pubmed/33187323 http://dx.doi.org/10.3390/polym12112662 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fidyk, Julia
Waliszewski, Witold
Sleczkowski, Piotr
Kiersnowski, Adam
Pisula, Wojciech
Marszalek, Tomasz
Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_full Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_fullStr Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_full_unstemmed Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_short Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_sort switching from electron to hole transport in solution-processed organic blend field-effect transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7709025/
https://www.ncbi.nlm.nih.gov/pubmed/33187323
http://dx.doi.org/10.3390/polym12112662
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