2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

The rise of 2D transition‐metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX(2) (X = S, Se) has attracted significant interest regarding its unusual 1T′ structure and extraordinary properties in various fields during the past 7 years. For instance, ReX(2) possesses large bandgaps (ReSe(2): 1.3 eV, ReS(2): 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T′ structure enable them great perspective to fabricate high‐performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re‐based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re‐based TMDs are discussed.