Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires

III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle. We investigate theoretically how this effect influences the electron-to-hole ratio in Si-doped GaAs nanowires. Several factors...

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Detalles Bibliográficos
Autores principales: Dubrovskii, Vladimir G., Hijazi, Hadi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712332/
https://www.ncbi.nlm.nih.gov/pubmed/32349326
http://dx.doi.org/10.3390/nano10050833

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712332/
https://www.ncbi.nlm.nih.gov/pubmed/32349326
http://dx.doi.org/10.3390/nano10050833

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