Cargando…
Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle. We investigate theoretically how this effect influences the electron-to-hole ratio in Si-doped GaAs nanowires. Several factors...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712332/ https://www.ncbi.nlm.nih.gov/pubmed/32349326 http://dx.doi.org/10.3390/nano10050833 |