Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible subst...

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Detalles Bibliográficos
Autores principales: Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichlé, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7728776/
https://www.ncbi.nlm.nih.gov/pubmed/33303773
http://dx.doi.org/10.1038/s41598-020-77681-z

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