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The Optical and Electrical Performance of CuO Synthesized by Anodic Oxidation Based on Copper Foam
Metal oxide semiconductor materials have a wide range of applications in the field of solar energy conversion. In this paper, CuO was prepared directly on copper foam substrate by anodic oxidation. The effects of current density and anodizing temperature on sample preparation and performance were st...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730794/ https://www.ncbi.nlm.nih.gov/pubmed/33261204 http://dx.doi.org/10.3390/ma13235411 |
Sumario: | Metal oxide semiconductor materials have a wide range of applications in the field of solar energy conversion. In this paper, CuO was prepared directly on copper foam substrate by anodic oxidation. The effects of current density and anodizing temperature on sample preparation and performance were studied. Field emission scanning electron microscopy (FESEM) and X-ray diffractometer (XRD) had been used to determine the morphology and phase structure of the sample, and its optical and electrical properties were discussed through UV-vis spectrophotometer and electrochemical tests. In addition, the influences of experimental conditions such as current density and reaction temperature on the morphology and properties of CuO were systematically discussed. The FESEM images showed that as the anodic oxidation temperature increase, the morphology of the prepared sample changed from nanowires to leaf-like CuO nanosheets. According to the results of XRD, the structure of prepared CuO was monoclinic, and the intensity of diffraction peaks gradually increased as anodizing temperature increased. We found that the optimum current density and anodizing temperature were 20 mA cm(−2) and 60 °C, respectively. The results of electrochemical indicated that the CuO electrode based on copper foam (CuO/Cu foam) prepared at the optimum exhibited the highest specific capacitance (0.1039 F cm(−2)) when the scan rate was 2 mV s(−1). |
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