Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal

To reduce the thermal stress during the sublimation growth of 45 mm AlN single crystal, a tungsten sink was put on the top of the crucible lid. Numerical experiments showed that the radial temperature gradient was reduced due to the homogenization effect on temperature as a result of the sink. There...

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Detalles Bibliográficos
Autores principales: Yu, Yue, Liu, Botao, Tang, Xia, Liu, Sheng, Gao, Bing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730854/
https://www.ncbi.nlm.nih.gov/pubmed/33291212
http://dx.doi.org/10.3390/ma13235553
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author Yu, Yue
Liu, Botao
Tang, Xia
Liu, Sheng
Gao, Bing
author_facet Yu, Yue
Liu, Botao
Tang, Xia
Liu, Sheng
Gao, Bing
author_sort Yu, Yue
collection PubMed
description To reduce the thermal stress during the sublimation growth of 45 mm AlN single crystal, a tungsten sink was put on the top of the crucible lid. Numerical experiments showed that the radial temperature gradient was reduced due to the homogenization effect on temperature as a result of the sink. Therefore, this simple tungsten sink method has the potential to grow large-size AlN ingots with fewer cracks. It also reveals that enhancing the heat exchange of the crucible lid is an effective way to improve the quality of crystal growth.
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spelling pubmed-77308542020-12-12 Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal Yu, Yue Liu, Botao Tang, Xia Liu, Sheng Gao, Bing Materials (Basel) Article To reduce the thermal stress during the sublimation growth of 45 mm AlN single crystal, a tungsten sink was put on the top of the crucible lid. Numerical experiments showed that the radial temperature gradient was reduced due to the homogenization effect on temperature as a result of the sink. Therefore, this simple tungsten sink method has the potential to grow large-size AlN ingots with fewer cracks. It also reveals that enhancing the heat exchange of the crucible lid is an effective way to improve the quality of crystal growth. MDPI 2020-12-06 /pmc/articles/PMC7730854/ /pubmed/33291212 http://dx.doi.org/10.3390/ma13235553 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yu, Yue
Liu, Botao
Tang, Xia
Liu, Sheng
Gao, Bing
Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
title Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
title_full Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
title_fullStr Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
title_full_unstemmed Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
title_short Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
title_sort homogenization of radial temperature by a tungsten sink in sublimation growth of 45 mm aln single crystal
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730854/
https://www.ncbi.nlm.nih.gov/pubmed/33291212
http://dx.doi.org/10.3390/ma13235553
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