Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si(1−x)Ge(x) structures, containing either...

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Autores principales: Ceponis, Tomas, Deveikis, Laimonas, Lastovskii, Stanislau, Makarenko, Leonid, Pavlov, Jevgenij, Pukas, Kornelijus, Rumbauskas, Vytautas, Gaubas, Eugenijus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
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Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730890/
https://www.ncbi.nlm.nih.gov/pubmed/33276481
http://dx.doi.org/10.3390/s20236884
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author Ceponis, Tomas
Deveikis, Laimonas
Lastovskii, Stanislau
Makarenko, Leonid
Pavlov, Jevgenij
Pukas, Kornelijus
Rumbauskas, Vytautas
Gaubas, Eugenijus
author_facet Ceponis, Tomas
Deveikis, Laimonas
Lastovskii, Stanislau
Makarenko, Leonid
Pavlov, Jevgenij
Pukas, Kornelijus
Rumbauskas, Vytautas
Gaubas, Eugenijus
author_sort Ceponis, Tomas
collection PubMed
description The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si(1−x)Ge(x) structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n(+)p structure.
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spelling pubmed-77308902020-12-12 Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors Ceponis, Tomas Deveikis, Laimonas Lastovskii, Stanislau Makarenko, Leonid Pavlov, Jevgenij Pukas, Kornelijus Rumbauskas, Vytautas Gaubas, Eugenijus Sensors (Basel) Article The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si(1−x)Ge(x) structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n(+)p structure. MDPI 2020-12-02 /pmc/articles/PMC7730890/ /pubmed/33276481 http://dx.doi.org/10.3390/s20236884 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ceponis, Tomas
Deveikis, Laimonas
Lastovskii, Stanislau
Makarenko, Leonid
Pavlov, Jevgenij
Pukas, Kornelijus
Rumbauskas, Vytautas
Gaubas, Eugenijus
Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_full Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_fullStr Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_full_unstemmed Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_short Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_sort transient electrical and optical characteristics of electron and proton irradiated sige detectors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730890/
https://www.ncbi.nlm.nih.gov/pubmed/33276481
http://dx.doi.org/10.3390/s20236884
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