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Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7733461/ https://www.ncbi.nlm.nih.gov/pubmed/33311592 http://dx.doi.org/10.1038/s41598-020-78462-4 |
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author | Holewa, Paweł Burakowski, Marek Musiał, Anna Srocka, Nicole Quandt, David Strittmatter, André Rodt, Sven Reitzenstein, Stephan Sęk, Grzegorz |
author_facet | Holewa, Paweł Burakowski, Marek Musiał, Anna Srocka, Nicole Quandt, David Strittmatter, André Rodt, Sven Reitzenstein, Stephan Sęk, Grzegorz |
author_sort | Holewa, Paweł |
collection | PubMed |
description | Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of [Formula: see text] up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance. |
format | Online Article Text |
id | pubmed-7733461 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-77334612020-12-15 Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band Holewa, Paweł Burakowski, Marek Musiał, Anna Srocka, Nicole Quandt, David Strittmatter, André Rodt, Sven Reitzenstein, Stephan Sęk, Grzegorz Sci Rep Article Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of [Formula: see text] up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance. Nature Publishing Group UK 2020-12-11 /pmc/articles/PMC7733461/ /pubmed/33311592 http://dx.doi.org/10.1038/s41598-020-78462-4 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Holewa, Paweł Burakowski, Marek Musiał, Anna Srocka, Nicole Quandt, David Strittmatter, André Rodt, Sven Reitzenstein, Stephan Sęk, Grzegorz Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
title | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
title_full | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
title_fullStr | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
title_full_unstemmed | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
title_short | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
title_sort | thermal stability of emission from single ingaas/gaas quantum dots at the telecom o-band |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7733461/ https://www.ncbi.nlm.nih.gov/pubmed/33311592 http://dx.doi.org/10.1038/s41598-020-78462-4 |
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