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Silicon carbide formation from methane and silicon monoxide
Silicon carbide (SiC) formation plays an important role during the production of elemental silicon. SiC forms through a high temperature reaction between silicon monoxide gas (SiO) and carbon. Currently, the carbon sources are solids, however finding a way of substituting the solid carbon with metha...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7733506/ https://www.ncbi.nlm.nih.gov/pubmed/33311573 http://dx.doi.org/10.1038/s41598-020-79006-6 |
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author | Aarnæs, Trygve Storm Ringdalen, Eli Tangstad, Merete |
author_facet | Aarnæs, Trygve Storm Ringdalen, Eli Tangstad, Merete |
author_sort | Aarnæs, Trygve Storm |
collection | PubMed |
description | Silicon carbide (SiC) formation plays an important role during the production of elemental silicon. SiC forms through a high temperature reaction between silicon monoxide gas (SiO) and carbon. Currently, the carbon sources are solids, however finding a way of substituting the solid carbon with methane could have several advantages. SiC formation was studied in argon, hydrogen and methane containing atmospheres at 1650 °C and 1750 °C. SiO gas was generated from pellets of a 1:2 molar ratio of SiC and silica (SiO(2)). The reactions were investigated through CO off-gas analysis in conjunction with measuring the weight change. After each experiment, the reaction products were examined in a scanning electron microscope with secondary electrons and through energy-dispersive X-ray spectroscopy. It was confirmed that SiC may form from SiO and methane. Increasing the methane content to 5% caused a significant increase in SiC formation. Furthermore, the SiC structure was also highly sensitive to the methane content that was used. In addition, the SiO producing reaction was affected by hydrogen. The hydrogen lead to an increased rate of SiO formation relative to what was seen in argon. The effect of hydrogen was most pronounced at 1750 °C which is right after the melting of silica. |
format | Online Article Text |
id | pubmed-7733506 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-77335062020-12-15 Silicon carbide formation from methane and silicon monoxide Aarnæs, Trygve Storm Ringdalen, Eli Tangstad, Merete Sci Rep Article Silicon carbide (SiC) formation plays an important role during the production of elemental silicon. SiC forms through a high temperature reaction between silicon monoxide gas (SiO) and carbon. Currently, the carbon sources are solids, however finding a way of substituting the solid carbon with methane could have several advantages. SiC formation was studied in argon, hydrogen and methane containing atmospheres at 1650 °C and 1750 °C. SiO gas was generated from pellets of a 1:2 molar ratio of SiC and silica (SiO(2)). The reactions were investigated through CO off-gas analysis in conjunction with measuring the weight change. After each experiment, the reaction products were examined in a scanning electron microscope with secondary electrons and through energy-dispersive X-ray spectroscopy. It was confirmed that SiC may form from SiO and methane. Increasing the methane content to 5% caused a significant increase in SiC formation. Furthermore, the SiC structure was also highly sensitive to the methane content that was used. In addition, the SiO producing reaction was affected by hydrogen. The hydrogen lead to an increased rate of SiO formation relative to what was seen in argon. The effect of hydrogen was most pronounced at 1750 °C which is right after the melting of silica. Nature Publishing Group UK 2020-12-11 /pmc/articles/PMC7733506/ /pubmed/33311573 http://dx.doi.org/10.1038/s41598-020-79006-6 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Aarnæs, Trygve Storm Ringdalen, Eli Tangstad, Merete Silicon carbide formation from methane and silicon monoxide |
title | Silicon carbide formation from methane and silicon monoxide |
title_full | Silicon carbide formation from methane and silicon monoxide |
title_fullStr | Silicon carbide formation from methane and silicon monoxide |
title_full_unstemmed | Silicon carbide formation from methane and silicon monoxide |
title_short | Silicon carbide formation from methane and silicon monoxide |
title_sort | silicon carbide formation from methane and silicon monoxide |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7733506/ https://www.ncbi.nlm.nih.gov/pubmed/33311573 http://dx.doi.org/10.1038/s41598-020-79006-6 |
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