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The Weak 3D Topological Insulator Bi(12)Rh(3)Sn(3)I(9)

Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation‐free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well‐characterized TIs is rath...

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Detalles Bibliográficos
Autores principales:	Lê Anh, Mai, Kaiser, Martin, Ghimire, Madhav Prasad, Richter, Manuel, Koepernik, Klaus, Gruschwitz, Markus, Tegenkamp, Christoph, Doert, Thomas, Ruck, Michael
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2020
Materias:	Full Papers
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7756808/ https://www.ncbi.nlm.nih.gov/pubmed/32490557 http://dx.doi.org/10.1002/chem.202001953

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