Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains

The relatively poor atomic-oxygen (AO) resistance of the standard polyimide (PI) films greatly limits the wide applications in low earth orbit (LEO) environments. The introduction of polyhedral oligomeric silsesquioxane (POSS) units into the molecular structures of the PI films has been proven to be...

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Detalles Bibliográficos
Autores principales: Wu, Hao, Zhang, Yan, Guo, Yi-Dan, Qi, Hao-Ran, An, Yuan-Cheng, Jia, Yan-Jiang, Tan, Yao-Yao, Liu, Jin-Gang, Wu, Bo-Han
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7760622/
https://www.ncbi.nlm.nih.gov/pubmed/33265995
http://dx.doi.org/10.3390/polym12122865

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7760622/
https://www.ncbi.nlm.nih.gov/pubmed/33265995
http://dx.doi.org/10.3390/polym12122865

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