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Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains
The relatively poor atomic-oxygen (AO) resistance of the standard polyimide (PI) films greatly limits the wide applications in low earth orbit (LEO) environments. The introduction of polyhedral oligomeric silsesquioxane (POSS) units into the molecular structures of the PI films has been proven to be...
Autores principales: | Wu, Hao, Zhang, Yan, Guo, Yi-Dan, Qi, Hao-Ran, An, Yuan-Cheng, Jia, Yan-Jiang, Tan, Yao-Yao, Liu, Jin-Gang, Wu, Bo-Han |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7760622/ https://www.ncbi.nlm.nih.gov/pubmed/33265995 http://dx.doi.org/10.3390/polym12122865 |
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