Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

For high-speed and large-area active-matrix displays, metal-oxide thin-film transistors (TFTs) with high field-effect mobility, stability, and good uniformity are essential. Moreover, reducing the RC delay is also important to achieve high-speed operation, which is induced by the parasitic capacitan...

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Detalles Bibliográficos
Autores principales: Choi, Seungbeom, Song, Seungho, Kim, Taegyu, Shin, Jae Cheol, Jo, Jeong-Wan, Park, Sung Kyu, Kim, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7760921/
https://www.ncbi.nlm.nih.gov/pubmed/33255690
http://dx.doi.org/10.3390/mi11121035

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7760921/
https://www.ncbi.nlm.nih.gov/pubmed/33255690
http://dx.doi.org/10.3390/mi11121035

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