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Schottky Barrier Height and Image Force Lowering in Monolayer MoS(2) Field Effect Transistors

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (T...

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Detalles Bibliográficos
Autores principales:	Vaknin, Yonatan, Dagan, Ronen, Rosenwaks, Yossi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7761329/ https://www.ncbi.nlm.nih.gov/pubmed/33255993 http://dx.doi.org/10.3390/nano10122346

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