O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi...

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Detalles Bibliográficos
Autores principales: Abouzaid, Oumaima, Mehdi, Hussein, Martin, Mickael, Moeyaert, Jérémy, Salem, Bassem, David, Sylvain, Souifi, Abdelkader, Chauvin, Nicolas, Hartmann, Jean-Michel, Ilahi, Bouraoui, Morris, Denis, Ahaitouf, Ali, Ahaitouf, Abdelaziz, Baron, Thierry
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7762389/
https://www.ncbi.nlm.nih.gov/pubmed/33297597
http://dx.doi.org/10.3390/nano10122450

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7762389/
https://www.ncbi.nlm.nih.gov/pubmed/33297597
http://dx.doi.org/10.3390/nano10122450

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