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Self-Biased Bidomain LiNbO(3)/Ni/Metglas Magnetoelectric Current Sensor

The article is devoted to the theoretical and experimental study of a magnetoelectric (ME) current sensor based on a gradient structure. It is known that the use of gradient structures in magnetostrictive-piezoelectric composites makes it possible to create a self-biased structure by replacing an ex...

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Detalles Bibliográficos
Autores principales: Bichurin, Mirza I., Petrov, Roman V., Leontiev, Viktor S., Sokolov, Oleg V., Turutin, Andrei V., Kuts, Victor V., Kubasov, Ilya V., Kislyuk, Alexander M., Temirov, Alexander A., Malinkovich, Mikhail D., Parkhomenko, Yuriy N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763743/
https://www.ncbi.nlm.nih.gov/pubmed/33322153
http://dx.doi.org/10.3390/s20247142
Descripción
Sumario:The article is devoted to the theoretical and experimental study of a magnetoelectric (ME) current sensor based on a gradient structure. It is known that the use of gradient structures in magnetostrictive-piezoelectric composites makes it possible to create a self-biased structure by replacing an external magnetic field with an internal one, which significantly reduces the weight, power consumption and dimensions of the device. Current sensors based on a gradient bidomain structure LiNbO(3) (LN)/Ni/Metglas with the following layer thicknesses: lithium niobate—500 μm, nickel—10 μm, Metglas—29 μm, operate on a linear section of the working characteristic and do not require the bias magnetic field. The main characteristics of a contactless ME current sensor: its current range measures up to 10 A, it has a sensitivity of 0.9 V/A, its current consumption is not more than 2.5 mA, and its linearity is maintained to an accuracy of 99.8%. Some additional advantages of a bidomain lithium niobate-based current sensor are the increased sensitivity of the device due to the use of the bending mode in the electromechanical resonance region and the absence of a lead component in the device.