Calculation of Hole Concentrations in Zn Doped GaAs Nanowires

We have previously demonstrated that we can grow p-type GaAs nanowires using Zn doping during gold catalyzed growth with aerotaxy. In this investigation, we show how to calculate the hole concentrations in such nanowires. We base the calculations on the Zhang–Northrup defect formation energy. Using...

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Detalles Bibliográficos
Autores principales: Johansson, Jonas, Ghasemi, Masoomeh, Sivakumar, Sudhakar, Mergenthaler, Kilian, Persson, Axel R., Metaferia, Wondwosen, Magnusson, Martin H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7765553/
https://www.ncbi.nlm.nih.gov/pubmed/33339116
http://dx.doi.org/10.3390/nano10122524

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7765553/
https://www.ncbi.nlm.nih.gov/pubmed/33339116
http://dx.doi.org/10.3390/nano10122524

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