Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve m...

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Detalles Bibliográficos
Autores principales: Quirion, David, Manna, Maria, Hidalgo, Salvador, Pellegrini, Giulio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766386/
https://www.ncbi.nlm.nih.gov/pubmed/33353092
http://dx.doi.org/10.3390/mi11121126
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author Quirion, David
Manna, Maria
Hidalgo, Salvador
Pellegrini, Giulio
author_facet Quirion, David
Manna, Maria
Hidalgo, Salvador
Pellegrini, Giulio
author_sort Quirion, David
collection PubMed
description This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.
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spelling pubmed-77663862020-12-28 Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM Quirion, David Manna, Maria Hidalgo, Salvador Pellegrini, Giulio Micromachines (Basel) Article This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology. MDPI 2020-12-18 /pmc/articles/PMC7766386/ /pubmed/33353092 http://dx.doi.org/10.3390/mi11121126 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Quirion, David
Manna, Maria
Hidalgo, Salvador
Pellegrini, Giulio
Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM
title Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM
title_full Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM
title_fullStr Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM
title_full_unstemmed Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM
title_short Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM
title_sort manufacturability and stress issues in 3d silicon detector technology at imb-cnm
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766386/
https://www.ncbi.nlm.nih.gov/pubmed/33353092
http://dx.doi.org/10.3390/mi11121126
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AT pellegrinigiulio manufacturabilityandstressissuesin3dsilicondetectortechnologyatimbcnm

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