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MoS(2) Nanosheets Sensitized with Quantum Dots for Room-Temperature Gas Sensors

The Internet of things for environment monitoring requires high performance with low power-consumption gas sensors which could be easily integrated into large-scale sensor network. While semiconductor gas sensors have many advantages such as excellent sensitivity and low cost, their application is l...

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Detalles Bibliográficos
Autores principales: Liu, Jingyao, Hu, Zhixiang, Zhang, Yuzhu, Li, Hua-Yao, Gao, Naibo, Tian, Zhilai, Zhou, Licheng, Zhang, Baohui, Tang, Jiang, Zhang, Jianbing, Yi, Fei, Liu, Huan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7770826/
https://www.ncbi.nlm.nih.gov/pubmed/34138314
http://dx.doi.org/10.1007/s40820-020-0394-6
Descripción
Sumario:The Internet of things for environment monitoring requires high performance with low power-consumption gas sensors which could be easily integrated into large-scale sensor network. While semiconductor gas sensors have many advantages such as excellent sensitivity and low cost, their application is limited by their high operating temperature. Two-dimensional (2D) layered materials, typically molybdenum disulfide (MoS(2)) nanosheets, are emerging as promising gas-sensing materials candidates owing to their abundant edge sites and high in-plane carrier mobility. This work aims to overcome the sluggish and weak response as well as incomplete recovery of MoS(2) gas sensors at room temperature by sensitizing MoS(2) nanosheets with PbS quantum dots (QDs). The huge amount of surface dangling bonds of QDs enables them to be ideal receptors for gas molecules. The sensitized MoS(2) gas sensor exhibited fast and recoverable response when operated at room temperature, and the limit of NO(2) detection was estimated to be 94 ppb. The strategy of sensitizing 2D nanosheets with sensitive QD receptors may enhance receptor and transducer functions as well as the utility factor that determine the sensor performance, offering a powerful new degree of freedom to the surface and interface engineering of semiconductor gas sensors. [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1007/s40820-020-0394-6) contains supplementary material, which is available to authorized users.