Cargando…

Atomically thin photoanode of InSe/graphene heterostructure

Achieving high-efficiency photoelectrochemical water splitting requires a better understanding of ion kinetics, e.g., diffusion, adsorption and reactions, near the photoelectrode’s surface. However, with macroscopic three-dimensional electrodes, it is often difficult to disentangle the contributions...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zheng, Haihong, Lu, Yizhen, Ye, Kai-Hang, Hu, Jinyuan, Liu, Shuai, Yan, Jiawei, Ye, Yu, Guo, Yuxi, Lin, Zhan, Cheng, Jun, Cao, Yang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7782821/ https://www.ncbi.nlm.nih.gov/pubmed/33398029 http://dx.doi.org/10.1038/s41467-020-20341-7

Ejemplares similares

Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe
por: Yao, Xiaojing, et al.
Publicado: (2021)

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure
por: Li, Jialin, et al.
Publicado: (2022)

High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures
por: Mudd, Garry W., et al.
Publicado: (2015)

Tunable Gain SnS(2)/InSe Van der Waals Heterostructure Photodetector
por: Hosseini, Seyedali, et al.
Publicado: (2022)

Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance
por: Huang, Xingyong, et al.
Publicado: (2022)

2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics
por: Shu, Yiqing, et al.
Publicado: (2022)

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
por: Zhang, Yadong, et al.
Publicado: (2021)

Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
por: Cho, Sang-Hoo, et al.
Publicado: (2021)

Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment
por: Yan, Yong, et al.
Publicado: (2021)

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI(2) Heterostructures
por: Lin, Yifeng, et al.
Publicado: (2020)

InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening
por: Ma, Zechen, et al.
Publicado: (2021)

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
por: Osiekowicz, M., et al.
Publicado: (2021)

Strain Effect on Thermoelectric Performance of InSe Monolayer
por: Wang, Qian, et al.
Publicado: (2019)

Composition dependent structural phase transition and optical band gap tuning in InSe thin films
por: Singh, Harpreet, et al.
Publicado: (2019)

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS(2) Heterostructures
por: Zhang, Wenjing, et al.
Publicado: (2014)

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
por: Mudd, Garry W, et al.
Publicado: (2013)

Electronic Structure and I-V Characteristics of InSe Nanoribbons
por: Yao, A-Long, et al.
Publicado: (2018)

Monte Carlo Study of Electronic Transport in Monolayer InSe
por: Gopalan, Sanjay, et al.
Publicado: (2019)

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
por: Xiao, Xian-Bo, et al.
Publicado: (2019)

The Interaction of Hydrogen with the van der Waals Crystal γ-InSe
por: Felton, James, et al.
Publicado: (2020)

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
por: Guo, Zhinan, et al.
Publicado: (2021)

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
por: Beardsley, Ryan, et al.
Publicado: (2016)

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
por: Sui, Fengrui, et al.
Publicado: (2023)

Revealing the origin of PL evolution of InSe flake induced by laser irradiation
por: Wang, Jing, et al.
Publicado: (2023)

Lattice Thermal Conductivity of Monolayer InSe Calculated by Machine Learning Potential
por: Han, Jinsen, et al.
Publicado: (2023)

p-MoS(2)/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices
por: Li, Pan, et al.
Publicado: (2019)

Corrigendum: Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
por: Beardsley, Ryan, et al.
Publicado: (2016)

Highly Stable InSe-FET Biosensor for Ultra-Sensitive Detection of Breast Cancer Biomarker CA125
por: Ji, Hao, et al.
Publicado: (2023)

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack
por: Chang, Pengying, et al.
Publicado: (2018)

InSe as a case between 3D and 2D layered crystals for excitons
por: Shubina, T. V., et al.
Publicado: (2019)

Giant Piezoresistive Effect and Strong Bandgap Tunability in Ultrathin InSe upon Biaxial Strain
por: Zhao, Qinghua, et al.
Publicado: (2020)

Effects of temperature and intrinsic structural defects on mechanical properties and thermal conductivities of InSe monolayers
por: Pham, Van-Trung, et al.
Publicado: (2020)

The Electronic and Optical Properties of InSe-GeTe Heterobilayer via Applying Biaxial Strain
por: Yang, Guofeng, et al.
Publicado: (2019)

Optical and Photosensitive Properties of Flexible n (p)–InSe/In(2)O(3) Heterojunctions
por: Sprincean, Veaceslav, et al.
Publicado: (2022)

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
por: Wu, Chia-Hsing, et al.
Publicado: (2022)

Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties
por: Sang, David K., et al.
Publicado: (2019)

Photogating Effect of Atomically Thin Graphene/MoS(2)/MoTe(2) van der Waals Heterostructures
por: Park, Do-Hyun, et al.
Publicado: (2023)

Two-Dimensional CdSe-PbSe Heterostructures and PbSe Nanoplatelets: Formation, Atomic Structure, and Optical Properties
por: Salzmann, Bastiaan B.V., et al.
Publicado: (2022)

Graphene based photoanode for DSSCs with high performances
por: Tang, Bo, et al.
Publicado: (2018)

Influence of Ce, Nd, Eu and Tm Dopants on the Properties of InSe Monolayer: A First-Principles Study
por: Xie, Zhi, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_rni7ctfaha1jo0jj9hlg147e9c