Role of dislocations in nitride laser diodes with different indium content

In this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All s...

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Detalles Bibliográficos
Autores principales: Bojarska-Cieślińska, Agata, Marona, Łucja, Smalc-Koziorowska, Julita, Grzanka, Szymon, Weyher, Jan, Schiavon, Dario, Perlin, Piotr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7794241/
https://www.ncbi.nlm.nih.gov/pubmed/33420146
http://dx.doi.org/10.1038/s41598-020-79528-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7794241/
https://www.ncbi.nlm.nih.gov/pubmed/33420146
http://dx.doi.org/10.1038/s41598-020-79528-z

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