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Atomic layer deposited films of Al(2)O(3) on fluorine-doped tin oxide electrodes: stability and barrier properties

Al(2)O(3) layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO(2)/glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media....

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Detalles Bibliográficos
Autores principales: Krýsová, Hana, Neumann-Spallart, Michael, Tarábková, Hana, Janda, Pavel, Kavan, Ladislav, Krýsa, Josef
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7801786/
https://www.ncbi.nlm.nih.gov/pubmed/33489664
http://dx.doi.org/10.3762/bjnano.12.2
Descripción
Sumario:Al(2)O(3) layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO(2)/glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (≈100 nm/h). The dissolution was slower in 1 M H(2)SO(4) (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached at pH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO.