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Non-volatile optical switch of resistance in photoferroelectric tunnel junctions
In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO(3) films and their photovoltaic response at visible light, the pola...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7810721/ https://www.ncbi.nlm.nih.gov/pubmed/33452259 http://dx.doi.org/10.1038/s41467-020-20660-9 |