Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes

We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originat...

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Detalles Bibliográficos
Autores principales: Nagasawa, Fumiya, Takamura, Makoto, Sekiguchi, Hiroshi, Miyamae, Yoshinori, Oku, Yoshiaki, Nakahara, Ken
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7810994/
https://www.ncbi.nlm.nih.gov/pubmed/33452427
http://dx.doi.org/10.1038/s41598-021-81116-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7810994/
https://www.ncbi.nlm.nih.gov/pubmed/33452427
http://dx.doi.org/10.1038/s41598-021-81116-8

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