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Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originat...
Autores principales: | Nagasawa, Fumiya, Takamura, Makoto, Sekiguchi, Hiroshi, Miyamae, Yoshinori, Oku, Yoshiaki, Nakahara, Ken |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7810994/ https://www.ncbi.nlm.nih.gov/pubmed/33452427 http://dx.doi.org/10.1038/s41598-021-81116-8 |
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