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Extended gate field-effect-transistor for sensing cortisol stress hormone
Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect transistor (EG-FET) for the recognition of cor...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7815575/ https://www.ncbi.nlm.nih.gov/pubmed/33506228 http://dx.doi.org/10.1038/s43246-020-00114-x |
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author | Sheibani, Shokoofeh Capua, Luca Kamaei, Sadegh Akbari, Sayedeh Shirin Afyouni Zhang, Junrui Guerin, Hoel Ionescu, Adrian M. |
author_facet | Sheibani, Shokoofeh Capua, Luca Kamaei, Sadegh Akbari, Sayedeh Shirin Afyouni Zhang, Junrui Guerin, Hoel Ionescu, Adrian M. |
author_sort | Sheibani, Shokoofeh |
collection | PubMed |
description | Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect transistor (EG-FET) for the recognition of cortisol in biological buffers within the Debye screening length. The device shows promising experimental features for real-time monitoring of the circadian rhythm of cortisol in human sweat. We report a hysteresis-free EG-FET with a voltage sensitivity of the order of 14 mV/decade and current sensitivity up to 80% over the four decades of cortisol concentration. The detection limit is 0.2 nM over a wide range, between 1 nM and 10 µM, of cortisol concentrations in physiological fluid, with negligible drift over time and high selectivity. The dynamic range fully covers those in human sweat. We propose a comprehensive analysis and a unified, predictive analytical mapping of current sensitivity in all regimes of operation. |
format | Online Article Text |
id | pubmed-7815575 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-78155752021-01-25 Extended gate field-effect-transistor for sensing cortisol stress hormone Sheibani, Shokoofeh Capua, Luca Kamaei, Sadegh Akbari, Sayedeh Shirin Afyouni Zhang, Junrui Guerin, Hoel Ionescu, Adrian M. Commun Mater Article Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect transistor (EG-FET) for the recognition of cortisol in biological buffers within the Debye screening length. The device shows promising experimental features for real-time monitoring of the circadian rhythm of cortisol in human sweat. We report a hysteresis-free EG-FET with a voltage sensitivity of the order of 14 mV/decade and current sensitivity up to 80% over the four decades of cortisol concentration. The detection limit is 0.2 nM over a wide range, between 1 nM and 10 µM, of cortisol concentrations in physiological fluid, with negligible drift over time and high selectivity. The dynamic range fully covers those in human sweat. We propose a comprehensive analysis and a unified, predictive analytical mapping of current sensitivity in all regimes of operation. Nature Publishing Group UK 2021-01-19 2021 /pmc/articles/PMC7815575/ /pubmed/33506228 http://dx.doi.org/10.1038/s43246-020-00114-x Text en © The Author(s) 2021 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Sheibani, Shokoofeh Capua, Luca Kamaei, Sadegh Akbari, Sayedeh Shirin Afyouni Zhang, Junrui Guerin, Hoel Ionescu, Adrian M. Extended gate field-effect-transistor for sensing cortisol stress hormone |
title | Extended gate field-effect-transistor for sensing cortisol stress hormone |
title_full | Extended gate field-effect-transistor for sensing cortisol stress hormone |
title_fullStr | Extended gate field-effect-transistor for sensing cortisol stress hormone |
title_full_unstemmed | Extended gate field-effect-transistor for sensing cortisol stress hormone |
title_short | Extended gate field-effect-transistor for sensing cortisol stress hormone |
title_sort | extended gate field-effect-transistor for sensing cortisol stress hormone |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7815575/ https://www.ncbi.nlm.nih.gov/pubmed/33506228 http://dx.doi.org/10.1038/s43246-020-00114-x |
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