Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material

The crystallization of amorphous Ge(2)Sb(2)Te(5) phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a lo...

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Detalles Bibliográficos
Autor principal: An, Byeong-Seon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2019
Materias:
Novus Imago
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818282/
https://www.ncbi.nlm.nih.gov/pubmed/33580433
http://dx.doi.org/10.1186/s42649-019-0021-5
Descripción
Sumario:The crystallization of amorphous Ge(2)Sb(2)Te(5) phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge(2)Sb(2)Te(5) film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.

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