Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material

The crystallization of amorphous Ge(2)Sb(2)Te(5) phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a lo...

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Autor principal: An, Byeong-Seon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2019
Materias:
Novus Imago
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818282/
https://www.ncbi.nlm.nih.gov/pubmed/33580433
http://dx.doi.org/10.1186/s42649-019-0021-5
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author An, Byeong-Seon
author_facet An, Byeong-Seon
author_sort An, Byeong-Seon
collection PubMed
description The crystallization of amorphous Ge(2)Sb(2)Te(5) phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge(2)Sb(2)Te(5) film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.
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spelling pubmed-78182822021-02-10 Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material An, Byeong-Seon Appl Microsc Novus Imago The crystallization of amorphous Ge(2)Sb(2)Te(5) phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge(2)Sb(2)Te(5) film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction. Springer Singapore 2019-12-17 /pmc/articles/PMC7818282/ /pubmed/33580433 http://dx.doi.org/10.1186/s42649-019-0021-5 Text en © The Author(s) 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Novus Imago
An, Byeong-Seon
Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material
title Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material
title_full Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material
title_fullStr Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material
title_full_unstemmed Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material
title_short Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material
title_sort electron beam irradiation induced crystallization behavior of amorphous ge(2)sb(2)te(5) chalcogenide material
topic Novus Imago
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818282/
https://www.ncbi.nlm.nih.gov/pubmed/33580433
http://dx.doi.org/10.1186/s42649-019-0021-5
work_keys_str_mv AT anbyeongseon electronbeamirradiationinducedcrystallizationbehaviorofamorphousge2sb2te5chalcogenidematerial

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