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Sequential conversion from line defects to atomic clusters in monolayer WS(2)
Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS(2) and WS(2), S vacancies are formed prefe...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Singapore
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818298/ https://www.ncbi.nlm.nih.gov/pubmed/33580451 http://dx.doi.org/10.1186/s42649-020-00047-2 |