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Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures
One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of hi...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822199/ https://www.ncbi.nlm.nih.gov/pubmed/33374536 http://dx.doi.org/10.3390/nano11010009 |
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author | Kim, Sung-Un Ra, Yong-Ho |
author_facet | Kim, Sung-Un Ra, Yong-Ho |
author_sort | Kim, Sung-Un |
collection | PubMed |
description | One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and long-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and long-InGaN nanowire heterostructures on silicon (Si) substrate using molecular beam epitaxy (MBE) system. From scanning electron microscope (SEM) and transmission electron microscope (TEM) results, it was confirmed that the various doped-InGaN nanowire structures show much higher crystal quality compared to conventional nanowire structures. By introducing a new three-step modulated growth technique, the n-/p-InGaN active regions were greatly increased and the optical properties were also dramatically improved due to reduced phase separation. In addition, a multi-band p-InGaN/GaN heterostructure was successfully fabricated with the core–shell nanowire structures, which enable the emission of light in the entire visible spectral range, and protect the InGaN surface from surface recombination. This paper offers important insight into the design and epitaxial growth of InGaN nanowire heterostructures. |
format | Online Article Text |
id | pubmed-7822199 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-78221992021-01-23 Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures Kim, Sung-Un Ra, Yong-Ho Nanomaterials (Basel) Article One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and long-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and long-InGaN nanowire heterostructures on silicon (Si) substrate using molecular beam epitaxy (MBE) system. From scanning electron microscope (SEM) and transmission electron microscope (TEM) results, it was confirmed that the various doped-InGaN nanowire structures show much higher crystal quality compared to conventional nanowire structures. By introducing a new three-step modulated growth technique, the n-/p-InGaN active regions were greatly increased and the optical properties were also dramatically improved due to reduced phase separation. In addition, a multi-band p-InGaN/GaN heterostructure was successfully fabricated with the core–shell nanowire structures, which enable the emission of light in the entire visible spectral range, and protect the InGaN surface from surface recombination. This paper offers important insight into the design and epitaxial growth of InGaN nanowire heterostructures. MDPI 2020-12-23 /pmc/articles/PMC7822199/ /pubmed/33374536 http://dx.doi.org/10.3390/nano11010009 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kim, Sung-Un Ra, Yong-Ho Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures |
title | Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures |
title_full | Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures |
title_fullStr | Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures |
title_full_unstemmed | Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures |
title_short | Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures |
title_sort | modeling and epitaxial growth of homogeneous long-ingan nanowire structures |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822199/ https://www.ncbi.nlm.nih.gov/pubmed/33374536 http://dx.doi.org/10.3390/nano11010009 |
work_keys_str_mv | AT kimsungun modelingandepitaxialgrowthofhomogeneouslongingannanowirestructures AT rayongho modelingandepitaxialgrowthofhomogeneouslongingannanowirestructures |