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Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures

One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of hi...

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Detalles Bibliográficos
Autores principales: Kim, Sung-Un, Ra, Yong-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822199/
https://www.ncbi.nlm.nih.gov/pubmed/33374536
http://dx.doi.org/10.3390/nano11010009