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Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures
One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of hi...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822199/ https://www.ncbi.nlm.nih.gov/pubmed/33374536 http://dx.doi.org/10.3390/nano11010009 |