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Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

Nonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures,...

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Autores principales: Li, Yan, Li, Yang, Li, Peng, Fang, Bin, Yang, Xu, Wen, Yan, Zheng, Dong-xing, Zhang, Chen-hui, He, Xin, Manchon, Aurélien, Cheng, Zhao-Hua, Zhang, Xi-xiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822853/
https://www.ncbi.nlm.nih.gov/pubmed/33483483
http://dx.doi.org/10.1038/s41467-020-20840-7
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author Li, Yan
Li, Yang
Li, Peng
Fang, Bin
Yang, Xu
Wen, Yan
Zheng, Dong-xing
Zhang, Chen-hui
He, Xin
Manchon, Aurélien
Cheng, Zhao-Hua
Zhang, Xi-xiang
author_facet Li, Yan
Li, Yang
Li, Peng
Fang, Bin
Yang, Xu
Wen, Yan
Zheng, Dong-xing
Zhang, Chen-hui
He, Xin
Manchon, Aurélien
Cheng, Zhao-Hua
Zhang, Xi-xiang
author_sort Li, Yan
collection PubMed
description Nonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.
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spelling pubmed-78228532021-01-29 Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe Li, Yan Li, Yang Li, Peng Fang, Bin Yang, Xu Wen, Yan Zheng, Dong-xing Zhang, Chen-hui He, Xin Manchon, Aurélien Cheng, Zhao-Hua Zhang, Xi-xiang Nat Commun Article Nonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices. Nature Publishing Group UK 2021-01-22 /pmc/articles/PMC7822853/ /pubmed/33483483 http://dx.doi.org/10.1038/s41467-020-20840-7 Text en © The Author(s) 2021 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Li, Yan
Li, Yang
Li, Peng
Fang, Bin
Yang, Xu
Wen, Yan
Zheng, Dong-xing
Zhang, Chen-hui
He, Xin
Manchon, Aurélien
Cheng, Zhao-Hua
Zhang, Xi-xiang
Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_full Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_fullStr Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_full_unstemmed Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_short Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_sort nonreciprocal charge transport up to room temperature in bulk rashba semiconductor α-gete
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822853/
https://www.ncbi.nlm.nih.gov/pubmed/33483483
http://dx.doi.org/10.1038/s41467-020-20840-7
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