Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer

Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-perf...

Descripción completa

Detalles Bibliográficos
Autores principales: Yen, Te Jui, Chin, Albert, Gritsenko, Vladimir
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7823917/
https://www.ncbi.nlm.nih.gov/pubmed/33401635
http://dx.doi.org/10.3390/nano11010092

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7823917/
https://www.ncbi.nlm.nih.gov/pubmed/33401635
http://dx.doi.org/10.3390/nano11010092

Ejemplares similares