Memristive Switching Characteristics in Biomaterial Chitosan-Based Solid Polymer Electrolyte for Artificial Synapse

This study evaluated the memristive switching characteristics of a biomaterial solid polymer electrolyte (SPE) chitosan-based memristor and confirmed its artificial synaptic behavior with analog switching. Despite the potential advantages of organic memristors for high-end electronics, the unstable multilevel states and poor reliability of organic devices must be overcome. The fabricated Ti/SPE-chitosan/Pt-structured memristor has stable bipolar resistive switching (BRS) behavior due to a cation-based electrochemical reaction between a polymeric electrolyte and metal ions and exhibits excellent endurance in 5 × 10(2) DC cycles. In addition, we achieved multilevel per cell (MLC) BRS I-V characteristics by adjusting the set compliance current (I(cc)) for analog switching. The multilevel states demonstrated uniform resistance distributions and nonvolatile retention characteristics over 10(4) s. These stable MLC properties are explained by the laterally intensified conductive filaments in SPE-chitosan, based on the linear relationship between operating voltage margin (ΔV(switching)) and I(cc). In addition, the multilevel resistance dependence on I(cc) suggests the capability of continuous analog resistance switching. Chitosan-based SPE artificial synapses ensure the emulation of short- and long-term plasticity of biological synapses, including excitatory postsynaptic current, inhibitory postsynaptic current, paired-pulse facilitation, and paired-pulse depression. Furthermore, the gradual conductance modulations upon repeated stimulation by 10(4) electric pulses were evaluated in high stability.