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Sidewall Slope Control of InP Via Holes for 3D Integration

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO(2) layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperat...

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Detalles Bibliográficos
Autores principales: Lee, Jongwon, Roh, Kilsun, Lim, Sung-Kyu, Kim, Youngsu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7829761/
https://www.ncbi.nlm.nih.gov/pubmed/33467019
http://dx.doi.org/10.3390/mi12010089