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Sidewall Slope Control of InP Via Holes for 3D Integration
This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO(2) layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperat...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7829761/ https://www.ncbi.nlm.nih.gov/pubmed/33467019 http://dx.doi.org/10.3390/mi12010089 |